Estimating mobility and lifetime of charge carriers in semiconductor detectors using Genetic Algorithms
by Noha Shaaban
International Journal of Signal and Imaging Systems Engineering (IJSISE), Vol. 2, No. 3, 2009

Abstract: A Genetic Algorithm (GA) was adopted to extract realistic values of the transport properties of both electrons and holes in semiconductor materials. A theoretical waveform model was fitted to the real digitised signal waveform taking into account the realistic transport parameters. This method is simple and useful for pulse shape analysis; the result demonstrates promise for the successful application of GAs for the estimation of detector parameters in semiconductor detectors.

Online publication date: Tue, 29-Jun-2010

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