Excess silicon concentration dependence of the structural and optical properties of silicon nanocrystals embedded in silicon oxide matrix
by Yussof Bin Wahab, Yeong Wai Woon, Karim Bin Deraman
International Journal of Nanomanufacturing (IJNM), Vol. 5, No. 1/2, 2010

Abstract: Silicon (Si) nanocrystals embedded in Si oxide matrix have been formed by rapid thermal annealing of sub-stoichiometric Si oxide films (SiO_x with x < 2). The SiO_x films were deposited by co-sputtering of Si oxide and Si target using magnetron RF sputtering technique. The Si-to-SiO₂ ratio was controlled by varying the number of Si chips being placed on the pure SiO₂ target during sputtering. Rapid thermal anneal in nitrogen gas at 1100°C lead to the decomposition of SiO_x into Si nanocrystals and SiO₂. The structural (size of nanocrystals) and optical properties (absorption and luminescence) of Si nanocrystals embedded in oxide matrix, were found, strongly depend on the initial excess Si concentration in SiO_x films.

Online publication date: Thu, 03-Dec-2009

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