A simple treatment of quantum dissipative transport in carbon nanotube transistors
by Mahmoud Ossaimee, Salah H. Gamal
International Journal of Nanomanufacturing (IJNM), Vol. 4, No. 1/2/3/4, 2009

Abstract: In this paper, we extend our simulation model for the ballistic transport in carbon nanotube field effect transistors (CNTFETs) to include carrier scattering and dissipative transport. A simplified quantum dissipative model is proposed based on the concept of Buttiker probes within the non-equilibrium Green's function (NEGF) formalism. We display a few of the simulation results and compare them with the ballistic transport case and with the results from more rigorous quantum models based on acoustic and optical phonon scattering models.

Online publication date: Mon, 07-Sep-2009

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