Improved luminescence properties of nanocrystalline silicon films deposited by plasma enhanced chemical vapour deposition technique at low temperature Online publication date: Sat, 08-Aug-2009
by Atif Mossad Ali, Ali Al-Hajry, M.S. Al-Assiri
International Journal of Nano and Biomaterials (IJNBM), Vol. 2, No. 1/2/3/4/5, 2009
Abstract: Nanocrystalline silicon (nc-Si) films have been prepared by plasma-enhanced chemical vapour deposition (PECVD). The feed gases were SiF4/SiH4/H2. The deposition temperature, Td and the air exposure time were varied. The optical properties of the films were evaluated by measurement of the photoluminescence (PL) and the structural properties were investigated by measurements of x-ray diffraction, Fourier transform infrared absorption and Raman scattering. The structural changed from an amorphous to a nanocrystalline phase at Td = 80°C. In addition, it suggests that Td low condition lead to the increase in the density of SiH-related bonds and a decrease in the average grain size, <δ>. The oxygen absorption peak increases with the air exposure time. The PL intensity increases and blue shifts consistently with the decrease of <δ> and increase of oxygen content.
Existing subscribers:
Go to Inderscience Online Journals to access the Full Text of this article.
If you are not a subscriber and you just want to read the full contents of this article, buy online access here.Complimentary Subscribers, Editors or Members of the Editorial Board of the International Journal of Nano and Biomaterials (IJNBM):
Login with your Inderscience username and password:
Want to subscribe?
A subscription gives you complete access to all articles in the current issue, as well as to all articles in the previous three years (where applicable). See our Orders page to subscribe.
If you still need assistance, please email subs@inderscience.com
Our Blog 
Follow us on Twitter 
Visit us on Facebook