CdO/PSi/Si photo detector Online publication date: Fri, 31-Jul-2009
by A. Azarian, A. Iraji zad, S.M. Mahdavi, M. Samadpoor
International Journal of Nanotechnology (IJNT), Vol. 6, No. 10/11, 2009
Abstract: In spite of various works which were carried out on CdO and porous Si (PSi) separately, the interesting properties of CdO/PSi/Si system are not known well. In this work, we study the photoconductivity of deposited CdO layer on PSi/Si system. PS and CdO layers were prepared by electrochemical anodisation of p-type crystalline silicon and pulsed laser deposition (PLD) of cadmium oxide target. Then samples were annealed in air at 500°C to increase their optical transmissions to a value as large as 90% for wavelengths above 700 nm. The XRD study reveals that the annealed films are polycrystalline with grain size of about 25 nm. SEM micrograph of the CdO/PSi/Si system indicates that CdO layer has sub micron granular structure on nano-porous silicon structure. The spectral responsivity of the photodiodes was measured in Vis.-near IR region. The light sensitivity showed linear behaviour vs. reverse bias voltage from 0.1 V to 3 V. The dark and photocurrent characteristics of CdO/PSi/Si structure showed ms response time. Experimental data shows that samples have good response to near infrared wavelengths.
Existing subscribers:
Go to Inderscience Online Journals to access the Full Text of this article.
If you are not a subscriber and you just want to read the full contents of this article, buy online access here.Complimentary Subscribers, Editors or Members of the Editorial Board of the International Journal of Nanotechnology (IJNT):
Login with your Inderscience username and password:
Want to subscribe?
A subscription gives you complete access to all articles in the current issue, as well as to all articles in the previous three years (where applicable). See our Orders page to subscribe.
If you still need assistance, please email subs@inderscience.com
Our Blog 
Follow us on Twitter 
Visit us on Facebook