A review of silicon carbide development in MEMS applications
by Liudi Jiang, Rebecca Cheung
International Journal of Computational Materials Science and Surface Engineering (IJCMSSE), Vol. 2, No. 3/4, 2009

Abstract: Due to its desirable material properties, Silicon Carbide (SiC) has become an alternative material to replace Si for Microelectromechanical Systems (MEMS) applications in harsh environments. To promote SiC MEMS development towards future cost-effective products, main technology areas in material deposition and processes have attracted significant interest. The developments in these areas have contributed to the rapid emergence of SiC MEMS prototypes. In this paper, we give an overview of the important developments in SiC material formation and fabrication processes in recent years. Some of the most interesting state-of-the-art SiC MEMS devices are reviewed. This highlights the major progresses in SiC MEMS developed thus far. This paper also looks into the prospect of SiC MEMS drawing attention to potential issues.

Online publication date: Tue, 28-Jul-2009

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