On the channel length dependence of negative bias temperature instability in nano-CMOS technology Online publication date: Mon, 18-May-2009
by Lei Jin, Mingzhen Xu
International Journal of Nanotechnology (IJNT), Vol. 6, No. 7/8, 2009
Abstract: The channel length dependence of NBTI degradation in a 65 nm CMOS technology is studied. Although it is generally observed that the NBTI degradation increases with the channel length decreasing, the role of the generated interface traps and the oxide positive charges in the NBTI channel length dependence is not clear yet. In this work, it is shown that the NBTI degradation of the B(boron) LDD devices have stronger channel length dependence as compared with the BF2 LDD devices. The channel length dependence of the oxide trapped charges density (ΔNot) and the interface trap density (ΔNit) are quantitatively estimated. Although both of the ΔNot and the ΔNit increase with the decreasing channel length, it is shown that the local ΔNit is significantly enhanced at the gate edge in B LDD devices. On the other hand, the ΔNot shows weaker channel length dependence in both B and BF2 LDD devices, as compared with the ΔNit in B LDD devices. These results imply that the enhanced NBTI degradation must be taking into consideration in the future device scaling.
Existing subscribers:
Go to Inderscience Online Journals to access the Full Text of this article.
If you are not a subscriber and you just want to read the full contents of this article, buy online access here.Complimentary Subscribers, Editors or Members of the Editorial Board of the International Journal of Nanotechnology (IJNT):
Login with your Inderscience username and password:
Want to subscribe?
A subscription gives you complete access to all articles in the current issue, as well as to all articles in the previous three years (where applicable). See our Orders page to subscribe.
If you still need assistance, please email subs@inderscience.com