Group-IV and V ion implantation into nanomaterials and elemental analysis on the nanometre scale Online publication date: Tue, 03-Feb-2009
by Andreas Markwitz, John Kennedy
International Journal of Nanotechnology (IJNT), Vol. 6, No. 3/4, 2009
Abstract: Novel group-IV and V nanomaterials are produced by newly set-up low energy ion implantation and electron beam annealing (EBA) systems at GNS Science. This review paper introduces the community to GNS's new nanotechnology systems. Three representative examples on the use of the systems for nanotechnology research and development are given for (a) subsurface lead ion implantation into Si resulting in an unexpected Pb retention after annealing, (b) SiC nanocrystals on Si as large as 500 nm formed by understoichiometric low-energy carbon ion implantation and EBA and (c) doping of ZnO. The results highlight the importance of low-energy ion implanted depth profiles intersecting with the surface, absence of oxygen in the annealing chamber and electron beam enhanced diffusion for novel nanomaterial development. Ion beam analysis methods of RBS and NRA prove to be useful in depth profiling implanted ions showing the ideal combination of ion implantation and ion beam analysis for nano-materials development.
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