A 1 × 64 Complementary Metal Oxide Semiconductor ranging sensor based on Current-Assisted Photonic Demodulators
by Ward Van Der Tempel, Daniel Van Nieuwenhove, Riemer Grootjans, Maarten Kuijk
International Journal of Intelligent Systems Technologies and Applications (IJISTA), Vol. 5, No. 3/4, 2008

Abstract: A new Complementary Metal Oxide Semiconductor (CMOS) active pixel-ranging sensor is presented, realised as a 1 × 64 array of 30 µm × 30 µm lock-in pixels. The sensor is based on the Current-Assisted Photonic Demodulator (CAPD), implemented in a Standard CMOS 0.35 µm technology. The ranging pixel achieves 75% Fill-Factor, 0.22 A W⁻¹ total QE and a demodulation bandwidth up to 70 MHz, both at 860 nm light. Range-finding is achieved through Modulated Wave Time-Of-Flight (TOF) measurements with a modulation frequency of 20 MHz. Distance measurements are presented. This sensor represents the first step towards integrating CAPD-based lock-in pixels in large TOF CMOS ranging systems.

Online publication date: Tue, 18-Nov-2008

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