Preparation and characterisation of ZnO:Ga films deposited on polyimide substrate by r.f. magnetron sputtering
by Sumin Li, Yutao Zhao, Zhao Zhang
International Journal of Materials and Product Technology (IJMPT), Vol. 31, No. 2/3/4, 2008

Abstract: Gallium-doped Zinc Oxide (GZO) thin films have been deposited onto Polyimide (PI) substrate by r.f. magnetron sputtering. The effects of the sputtering argon pressure, r.f. power, target-substrate distance, negative substrate bias on the electrical, structural, morphological properties and the growth rate of film are presented. The best results were obtained for a distance of 70 mm, argon sputtering pressure of 0.1 Pa, r.f. power of 100 W and the negative substrate bias of 40 V, where a resistivity of 9.4 × 10⁻⁴ Ω cm was achieved. The transmittance in the visible range exceeded 78%.

Online publication date: Sun, 27-Apr-2008

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