Indentation-induced crystallisation in amorphous silicon thin films Online publication date: Wed, 05-Sep-2007
by Z.W. Xu, A.H.W. Ngan
International Journal of Surface Science and Engineering (IJSURFSE), Vol. 1, No. 2/3, 2007
Abstract: Three amorphous silicon films with different ordering were deposited by magnetron sputtering at 300 K, 673 K and 873 K, respectively. Vickers indentations were made on the samples by loads of 9.8 N, 4.9 N and 0.49 N. Si-I phase was present in the indentations at 9.8 N on the film deposited at 300 K, but evidence for crystallisation into Si-I was less obvious at lower loads at 300 K, or in other films deposited at higher temperatures. The formation of the Si-I phase was probably due to delamination fracture. An increase in the disordering degree induced by indentation was also found in the film deposited at 873 K.
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