Dual band millimetre wave 32 GHz and 40 GHz HEMT low noise amplifier for Ka band applications
by J. Manjula
International Journal of Systems, Control and Communications (IJSCC), Vol. 13, No. 4, 2022

Abstract: This paper presents a design of dual band millimetre wave HEMT low noise amplifier (LNA) to produce a good gain level at 32 GHz and 40 GHz frequencies with a narrowband peak for Ka band applications. The proposed circuit is designed using 180-nm high electron mobility transistor (HEMT) and simulated in ADS tool. In order to achieve better gain at 32 GHz and 40 GHz, the proposed LNA has employed three stages of HEMT cascode amplifier with band pass filter and mixer. The simulation results show that the proposed LNA has obtained better forward transfer gain S₂₁ of 13.173 dB and 13.113 dB at the frequencies 32 GHz and 40 GHz, respectively. Also, the input and output reflection coefficient S₁₁ and S₂₂ are lesser than -40 dB for the designed frequencies. Less noise figure of 2 dB is attained at 32 GHz and 40 GHz with the less power consumption of 1.32 mW.

Online publication date: Mon, 24-Oct-2022

The full text of this article is only available to individual subscribers or to users at subscribing institutions.

 
Existing subscribers:
Go to Inderscience Online Journals to access the Full Text of this article.

Pay per view:
If you are not a subscriber and you just want to read the full contents of this article, buy online access here.

Complimentary Subscribers, Editors or Members of the Editorial Board of the International Journal of Systems, Control and Communications (IJSCC):
Login with your Inderscience username and password:

Username:        Password:          Forgotten your password?

Want to subscribe?
A subscription gives you complete access to all articles in the current issue, as well as to all articles in the previous three years (where applicable). See our Orders page to subscribe.

If you still need assistance, please email subs@inderscience.com