Design and analysis of tri-layered strained channel HOI CGAA FET Online publication date: Mon, 24-Oct-2022
by Rasmita Barik; Kuleen Kumar; Rudra Sankar Dhar
International Journal of Nanoparticles (IJNP), Vol. 14, No. 2/3/4, 2022
Abstract: Introducing three ultrathin-strained layers in the channel forming heterostructure-on-insulator (HOI) cylindrical gate-all-around (CGAA) FET is the requisite at nano regime. The outermost-layer and the central-layer of the CGAA is strained silicon (s-Si) while the middle-layer sandwiched between the two s-Si layers is strained silicon germanium (s-SiGe). Congealing the channel with these strained layers quantum carrier confinement prompts enhances the carrier mobility and counter threshold voltage roll-off. The tri-layer HOI device enhances device performance in comparison to conventional silicon CGAA. The newly developed CGAA at 22 nm gate length displays 20.6% enhancement in on-current in comparison to silicon CGAA. Further analysis of the novel device shows 92% and 80.2% improvement in Ion/Ioff ratio as compared to silicon CGAA and strained channel rectangular GAA, respectively. The CGAA also provided 16.2% augmentation on drain current as compare to 22 nm strained silicon channel rectangular GAA FET.
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