Performance parameter analysis and estimation of high-K induced three-fin SOI n-FinFET at 14 nm gate length
by Rudra Sankar Dhar; Sumit Kumar Sinha; Abhishek Verma; Taniya Chowdhury; Harshit Singh Tomar; Swagat Nanda; Zohmingmawia Renthlei
International Journal of Nanoparticles (IJNP), Vol. 14, No. 2/3/4, 2022

Abstract: The FinFET performances started degrading below the 32-nm technology node as a consequence of shrinking gate oxide thicknesses below 2 nm. Thus, the inclusion of high-k dielectric materials as gate oxides has become pivotal for efficient suppression of short channel effects (SCEs). Although the incorporation of high-k materials has diminished leakage currents, the drive currents have also lessened. It is observed that increasing the number of fins in the device significantly enhances the drain current. This paper describes the implementation of a 3-fin tri-gate (TG) SOI FinFET structure with high-k dielectric materials like Si₃N₄, Al₂O₃, ZrO₂ and HfO₂ replacing SiO₂ as gate oxide. An effective oxide thickness (EOT) of 1 nm is considered for the study of the electrical characteristics of all the devices. It was established that the use of 3-fin structure notably enhanced the drive currents while HfO₂ decreased the leakage currents leading to excellent switching speeds of the FinFET structure.

Online publication date: Mon, 24-Oct-2022

The full text of this article is only available to individual subscribers or to users at subscribing institutions.

 
Existing subscribers:
Go to Inderscience Online Journals to access the Full Text of this article.

Pay per view:
If you are not a subscriber and you just want to read the full contents of this article, buy online access here.

Complimentary Subscribers, Editors or Members of the Editorial Board of the International Journal of Nanoparticles (IJNP):
Login with your Inderscience username and password:

Username:        Password:          Forgotten your password?

Want to subscribe?
A subscription gives you complete access to all articles in the current issue, as well as to all articles in the previous three years (where applicable). See our Orders page to subscribe.

If you still need assistance, please email subs@inderscience.com