Y-shaped double-gate high electron mobility transistor for radio frequency applications
by Santashraya Prasad; Aminul Islam
International Journal of Nanoparticles (IJNP), Vol. 14, No. 2/3/4, 2022

Abstract: This paper presents a new Y-shaped double-gate high electron mobility transistor (HEMT) and studies the effect of recessing gate 1 (G₁). Various optimisation schemes have been incorporated in the newly proposed HEMT structure. The double-gate design shows a desirable RF characteristic such as transition frequency (f_T) and maximum oscillation frequency (f_MAX). Various DC characteristics such I_DS - V_DS, I_DS - V_GS and transconductance (g_m) of the proposed structure have been analysed. The optimum values of V_T, g_m, and I_DS have been obtained by proper positioning of gate 2 (G₂) with respect to gate 1 (G₁). This paper also investigates various microwave noise parameters such as minimum noise figure (NF_MIN), optimum reflection coefficient (Γ_OPT), and noise conductance (g_n), which are found to be acceptable for its desired application such as low noise amplifier (LNA) operable even beyond Ka band. The possible fabrication steps of the proposed structure are presented with suitable diagrams. The theoretical model of the proposed design has been verified with the simulation results obtained by simulating the structure with Atlas of Silvaco.

Online publication date: Mon, 24-Oct-2022

The full text of this article is only available to individual subscribers or to users at subscribing institutions.

 
Existing subscribers:
Go to Inderscience Online Journals to access the Full Text of this article.

Pay per view:
If you are not a subscriber and you just want to read the full contents of this article, buy online access here.

Complimentary Subscribers, Editors or Members of the Editorial Board of the International Journal of Nanoparticles (IJNP):
Login with your Inderscience username and password:

Username:        Password:          Forgotten your password?

Want to subscribe?
A subscription gives you complete access to all articles in the current issue, as well as to all articles in the previous three years (where applicable). See our Orders page to subscribe.

If you still need assistance, please email subs@inderscience.com