Influence of potassium hydroxide molarity and etching time on etching of Al-rich aluminium gallium nitride layer
by Y. Yusuf; M.E.A. Samsudin; M. Ikram Md Taib; N. Zainal; W.K. Tang
International Journal of Nanotechnology (IJNT), Vol. 19, No. 2/3/4/5, 2022

Abstract: In this work, n-doped AlGaN layer with a high Al composition of around 70% were etched using KOH solution. The molarity of KOH and the etching time were varied. With KOH molarity of 5 mol/L, no significant change in the formation of hexagonal pores, for 5 min etching and 10 min etching, was observed. Similar behaviour was also observed for the etching with 10 mol/L of KOH, which was carried out for 5 min. Nonetheless, with 10 mol/L of KOH, regardless of etching time, some of the Ga atoms were removed from the AlGaN lattice structure, resulting in AlGaN material with slightly higher Al composition. Besides, interestingly, bigger hexagonal pores (in macro scales) were formed when the etching was carried-out for 10 min using 10 mol/L of KOH. However, oxygen-containing materials were detected on the surface.

Online publication date: Wed, 27-Jul-2022

The full text of this article is only available to individual subscribers or to users at subscribing institutions.

 
Existing subscribers:
Go to Inderscience Online Journals to access the Full Text of this article.

Pay per view:
If you are not a subscriber and you just want to read the full contents of this article, buy online access here.

Complimentary Subscribers, Editors or Members of the Editorial Board of the International Journal of Nanotechnology (IJNT):
Login with your Inderscience username and password:

    Username:        Password:         

Forgotten your password?


Want to subscribe?
A subscription gives you complete access to all articles in the current issue, as well as to all articles in the previous three years (where applicable). See our Orders page to subscribe.

If you still need assistance, please email subs@inderscience.com