Effects of different growth temperatures towards indium incorporation in InGaN quantum well heterostructure Online publication date: Wed, 27-Jul-2022
by M.A.C. Seliman; Z. Hassan; A.S. Yusof; M.A. Ahmad; N.A. Hamzah; R.I.M. Asri; M.I.M. Taib; M.S.N.S. Baharin
International Journal of Nanotechnology (IJNT), Vol. 19, No. 2/3/4/5, 2022
Abstract: In the present work, InGaN quantum well (QW) and undoped GaN layer were grown on a flat sapphire substrate (FSS) with different growth temperatures using metal organic chemical vapour phase deposition (MOCVD) to investigate the effects of growth temperature towards indium (In) composition and performance of the heterostructure. Centred on the photoluminescence (PL) measurement, within growth temperature of 750°C to 850°C, the range of emission wavelength achieved was 386 nm to 476 nm. While higher growth temperature led to shorter emission wavelength, In composition in the active region was affected as well due to decomposition of In at high temperature. Using quantitative phase analysis of high resolution X-ray diffraction system (HRXRD), measurement of In composition was conducted to further study the structural properties of the structure and conclude the optimisation of InGaN QW layer.
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