Design and characterisation of a new GaN/AlGaN HEMT transistor Online publication date: Mon, 13-Jun-2022
by Naji Guedri; Naoufel Ismail; Rached Gharbi
International Journal of Modelling, Identification and Control (IJMIC), Vol. 38, No. 3/4, 2021
Abstract: HEMT transistor is considered as a backbone of both optical and microwave high-power electronic applications. In this paper, we designed and discussed the structure of an AlGaN/GaN HEMT. We designed the original two-dimensional architecture composed of COMSOL Multi-physics software. This model is characterised by its very small geometric dimensions 0.52 μm × 1 μm, and Lg = 0.24 μm. It is standardised and meets the operating needs of microcircuits, and it has a very low power dissipation of 3.3 W/mm, the maximum current value is 330 mA/mm, the threshold voltage VTH = 3 V and the trans-conductance Gm = 100 mS/mm. In addition, this device shows good electrical simulation results without the convergence problem of higher gate voltage (Vgs = 5 V). In addition, it can withstand the effect of thermal effects on the DC performance of the transistor at temperatures up to 225°C. The existing data introduces, discusses, and confirms the results.
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