Bias enhanced growth of diamond on coarse and micrograin cemented carbide
by Gil Cabral, Elby Titus, J. Gracio
International Journal of Nanomanufacturing (IJNM), Vol. 1, No. 2, 2006

Abstract: Ultra-fine diamond grains were deposited directly onto Co-cemented tungsten carbide (WC-Co) substrates via plasma-enhanced hot-filament Chemical Vapour Deposition (CVD), using a parallel molybdenum plate. It was employed a Bias-Enhanced Growth (BEG) process at different times, 15, 20, 25 and 30 min, for the self nucleation of diamond grains. The ultra-fine crystallinity, smoothness and purity of diamond grains were characterised using, Scanning Electron Microscopy (SEM), Atomic Force Microscope (AFM) and Raman spectroscopy. The diamond nucleation on micro and coarse grain WC-Co substrates was compared using SEM analysis.

Online publication date: Sun, 28-Jan-2007

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