A novel study and research on multilayer AlAs/GaAs quantum dot inner layer for solar cell applications
by H. Victor Du John; D. Jackuline Moni; G. Prabhu Rubesh
International Journal of Computer Aided Engineering and Technology (IJCAET), Vol. 15, No. 2/3, 2021

Abstract: Quantum dot solar cell is effectively used in many solar applications to obtain the maximum conversion efficiency. Using materials such as InAs and GaAs or the combination of strained InGaAs/AlGaAs on GaAs substrate provides an improved efficiency. Multi-layer quantum cells provides better energy coupling than other existing models defining the rate equations in terms of their applications in the current research in solar cell applications. The proposed research work addresses the issues present in the earlier solar cell applications by a deep literature survey and then the proposed model is designed using multilayer materials such as AlAs and GaAs quantum dot solar cells. The proposed model provides an improved conversion efficiency of 26.79% and the results are compared for all the available layers.

Online publication date: Thu, 19-Aug-2021

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