Investigation of DC performance of Ge-source pocket silicon-on-insulator tunnel field effect transistor in nano regime
by Sanjeet Kumar Sinha; Sweta Chander
International Journal of Nanoparticles (IJNP), Vol. 13, No. 1, 2021

Abstract: As devices are scaled down in nano regime the steepest subthreshold swing becomes the most desirable characteristic for the improvement of the performance of devices. To address this issue, tunnel field effect transistor is one of the promising candidates for replacing conventional MOS device. This paper investigates the impact of source pocket on switching behaviour of n-type Ge-source SOI-TFET and shows improvements in the device performance in terms of SS, I_ON, I_OFF and I_ON/I_OFF. The proposed device is compared with the homojunction SOI-TFET. The improved electrical characteristics of device are analysed on the basis of simulation results and justified by the theoretical concept. The device offers the steepest SS of 11 mV/decade, higher I_ON of 120 μA, and higher I_ON/I_OFF ratio of 8.64 × 10¹¹. The device characteristics are investigated by using TCAD tool.

Online publication date: Tue, 11-May-2021

The full text of this article is only available to individual subscribers or to users at subscribing institutions.

 
Existing subscribers:
Go to Inderscience Online Journals to access the Full Text of this article.

Pay per view:
If you are not a subscriber and you just want to read the full contents of this article, buy online access here.

Complimentary Subscribers, Editors or Members of the Editorial Board of the International Journal of Nanoparticles (IJNP):
Login with your Inderscience username and password:

Username:        Password:          Forgotten your password?

Want to subscribe?
A subscription gives you complete access to all articles in the current issue, as well as to all articles in the previous three years (where applicable). See our Orders page to subscribe.

If you still need assistance, please email subs@inderscience.com