Modelling of transport properties of graphene field-effect transistor for sensor application
by Geoffrey Ijeomah; Fahmi Samsuri; Mohamad Adzhar Md Zawawi
International Journal of Biomedical Nanoscience and Nanotechnology (IJBNN), Vol. 4, No. 1/2, 2020

Abstract: A dual-gated ultra-thin graphene field effect transistor (GFET) suitable for electronic sensing application is modelled. The applied simulation approach reproduces accurately the transport properties of the GFET characteristics and enables investigation of the influence of the different physical, biological and chemical factors. The simulation readouts and additional charges in the system are interpreted in the form of current-voltage characteristics and shift in Dirac peaks. These features could be extracted to predict the sensing mechanism of the GFET.

Online publication date: Thu, 07-May-2020

The full text of this article is only available to individual subscribers or to users at subscribing institutions.

 
Existing subscribers:
Go to Inderscience Online Journals to access the Full Text of this article.

Pay per view:
If you are not a subscriber and you just want to read the full contents of this article, buy online access here.

Complimentary Subscribers, Editors or Members of the Editorial Board of the International Journal of Biomedical Nanoscience and Nanotechnology (IJBNN):
Login with your Inderscience username and password:

Username:        Password:          Forgotten your password?

Want to subscribe?
A subscription gives you complete access to all articles in the current issue, as well as to all articles in the previous three years (where applicable). See our Orders page to subscribe.

If you still need assistance, please email subs@inderscience.com