Analysis of 4H-SiC Schottky barrier diode with a comb-shaped field plate
by Dongwoo Bae; Chungbu Jeong; Taewan Kim; Kwangsoo Kim
International Journal of Power Electronics (IJPELEC), Vol. 10, No. 4, 2019

Abstract: In this study, we have proposed a comb-shaped field plate for use in a 4H-SiC Schottky barrier diode; this field plate was expected to improve the electric field distribution in the device and provide a higher breakdown voltage than conventional field plate structures. The main principle of the proposed structure is to distribute the inner electric field in the blocking mode through a stepped oxide structure formed by several trenches. The proposed structure was optimised using a simulation, and we fabricated and measured a number of devices to evaluate the performance of the proposed structure. The proposed device's breakdown voltage was 39% better than that of a SiC Schottky barrier diode containing conventional field plates.

Online publication date: Mon, 30-Sep-2019

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