Wet-chemical etching of GaAs(211)B wafers for controlling the surface properties Online publication date: Mon, 23-Sep-2019
by Selin Özden; Mümin Mehmet Koç
International Journal of Surface Science and Engineering (IJSURFSE), Vol. 13, No. 2/3, 2019
Abstract: Substrate surface plays an important role to achieve high performance infrared devices and high-quality film layers. GaAs (211)B wafers were intensively used in infrared detector applications. Despite 'epiready' wafers can easily be found on the market, most of them have defects and contaminations due to their fabrication processes. The defects and contaminations on wafers may have deleterious effects on thin film growth and detector applications. To overcome such problems, various chemical treatments should be implemented prior to thin film growth. In this study, to understand the effect of wet chemical cleaning process on epiready (211)B GaAs wafers, piranha solution-based wet chemical etching was performed. After these treatments, the surfaces of GaAs wafers were investigated by atomic force microscopy and scanning electron microscopy. Energy dispersive X-ray spectroscopy was used to assess the chemical composition of the surface. The vibrational modes and two-dimensional maps were observed by a Raman spectroscopy.
Existing subscribers:
Go to Inderscience Online Journals to access the Full Text of this article.
If you are not a subscriber and you just want to read the full contents of this article, buy online access here.Complimentary Subscribers, Editors or Members of the Editorial Board of the International Journal of Surface Science and Engineering (IJSURFSE):
Login with your Inderscience username and password:
Want to subscribe?
A subscription gives you complete access to all articles in the current issue, as well as to all articles in the previous three years (where applicable). See our Orders page to subscribe.
If you still need assistance, please email subs@inderscience.com
Our Blog 
Follow us on Twitter 
Visit us on Facebook