Temperature dependence of the states of interface and energy distributions of Au/n-type GaAs Schottky structures
by Yaşar Aslan; Şükrü Karataş
International Journal of Hydromechatronics (IJHM), Vol. 2, No. 2, 2019

Abstract: The purpose of this paper is to characterise states density of interface of Au/n-type contacts of GaAs Schottky over a wide temperature range. Temperature is dependent of the distribution of energy of states density of interface (N_SS) profile calculated by the characteristics of forward bias I-V. The heights of barrier calculated by C⁻²-V plots at high frequency reduced linearly with enhancing temperature. It is found that the mean N_SS enhances with the temperature enhancing. The results present that states densities of interface are very significant parameters that affects the electrical properties of Au/n-GaAs diodes of Schottky.

Online publication date: Wed, 17-Jul-2019

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