Impact of Mg doping contents on the n-type and p-type ZnO by first-principles calculations Online publication date: Tue, 24-Jul-2018
by Yanfang Zhao; Wei Ding; Hongchang Wang; Qiao Dai
International Journal of Materials and Structural Integrity (IJMSI), Vol. 12, No. 1/2/3, 2018
Abstract: The effect of Mg doping on the electrical properties of pure ZnO and Al-doped ZnO, Al-2N co-doped ZnO have been investigated. It was found that after Mg doping, the bandgap values increased with the increase of Mg doping concentration. After Mg was doped into the Al doped ZnO structure, it was found that as the Mg doping contents increased, the CBM gradually moved toward the higher energy direction, the VBM gradually moved toward the lower energy direction, resulting in an increase of the band gap. After Mg was doped into the Al-2N co-doped structure, the band structure of Al-2N-Mg co-doped ZnO had a shallow acceptor level, indicating that the incorporation of Mg is beneficial for the electrical properties of p-type ZnO. The absorption of Al-2N-Mg co-doped ZnO is higher than that of Al-2N co-doped ZnO in the range of the visible region, which has a significant meaning for the applications on solar cell devices.
Online publication date: Tue, 24-Jul-2018
If you are not a subscriber and you just want to read the full contents of this article, buy online access here.Complimentary Subscribers, Editors or Members of the Editorial Board of the International Journal of Materials and Structural Integrity (IJMSI):
Login with your Inderscience username and password:
Want to subscribe?
A subscription gives you complete access to all articles in the current issue, as well as to all articles in the previous three years (where applicable). See our Orders page to subscribe.
If you still need assistance, please email email@example.com