Determination of the mechanism behind the organic magnetoresistance (OMAR) effect by using impedance spectroscopy Online publication date: Wed, 28-Jan-2015
by Marine Fayolle; Mariko Yamaguchi; Song Toan Pham; Tatsuhiko Ohto; Hirokazu Tada
International Journal of Nanotechnology (IJNT), Vol. 12, No. 3/4, 2015
Abstract: We investigated the organic magnetoresistance (OMAR) mechanism in poly(3-hexylthiophene-2,5-diyl) (P3HT)-based diodes, by using impedance spectroscopy. We have prepared layered structures consisting of indium tin oxide, poly(3,4-ethylenedioxythiophene):poly(styrenesulphonate) (PEDOT:PSS), P3HT and aluminium and measured the bias voltage dependence of the OMAR and of the impedance spectra. The capacitance deduced from the impedance data indicated that the OMAR was explained by the single-carrier (bipolaron) model at lower bias voltages as well as double-carrier models at higher bias voltages. The impedance response also suggested that the OMAR from the single-carrier model was governed by the PEDOT:PSS/P3HT interface whereas the double-carrier OMAR was mainly related to the P3HT layer.
Online publication date: Wed, 28-Jan-2015
If you are not a subscriber and you just want to read the full contents of this article, buy online access here.Complimentary Subscribers, Editors or Members of the Editorial Board of the International Journal of Nanotechnology (IJNT):
Login with your Inderscience username and password:
Want to subscribe?
A subscription gives you complete access to all articles in the current issue, as well as to all articles in the previous three years (where applicable). See our Orders page to subscribe.
If you still need assistance, please email firstname.lastname@example.org