Field effect transport properties of chemically treated graphene quantum dots
by Hemen Kalita; V. Harikrishnan; M. Aslam
International Journal of Nanotechnology (IJNT), Vol. 11, No. 1/2/3/4, 2014

Abstract: We report the field effect properties of lithographically fabricated FET with as-prepared graphene quantum dots (GQDs) and hydrazine treated GQDs as channel material. GQDs of 4.5 ± 0.55 nm average diameter are synthesised via an electrochemical approach using multiwalled carbon nanotubes (MWCNTs) as precursor. After treatment in hydrazine vapour for 24 h, the field effect measurements yield hole mobility of 0.01 cm2 V−1s−1and Ion/Ioff ratio of about 45. Hydrazine treated channel shows a significant decrease in resistance in comparison to the channel with as-prepared GQDs and is p-type under ambient conditions.

Online publication date: Thu, 13-Mar-2014

The full text of this article is only available to individual subscribers or to users at subscribing institutions.

Existing subscribers:
Go to Inderscience Online Journals to access the Full Text of this article.

Pay per view:
If you are not a subscriber and you just want to read the full contents of this article, buy online access here.

Complimentary Subscribers, Editors or Members of the Editorial Board of the International Journal of Nanotechnology (IJNT):
Login with your Inderscience username and password:

    Username:        Password:         

Forgotten your password?

Want to subscribe?
A subscription gives you complete access to all articles in the current issue, as well as to all articles in the previous three years (where applicable). See our Orders page to subscribe.

If you still need assistance, please email