Simulation, modelling and characterisation of quasi-ballistic transport in nanometer sized field effect transistors: from TCAD to atomistic simulation
by Stephan Roche, Thierry Poiroux, Gilles Lecarval, Sylvain Barraud, Francois Triozon, Martin Persson, Yann Michel Niquet
International Journal of Nanotechnology (IJNT), Vol. 7, No. 4/5/6/7/8, 2010

Abstract: In this paper, we review and contrast some computational methodologies to investigate charge transport in low dimensional materials and devices. This includes ultra-scaled MOS devices as well as nanowires-based field effects transistors or carbon nanotubes-based emerging devices. After presenting the context of nanodevice simulation, the focus will be made on the limits for ballistic transport in these several types of nanodevices.

Online publication date: Sun, 21-Feb-2010

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