Simulation, modelling and characterisation of quasi-ballistic transport in nanometer sized field effect transistors: from TCAD to atomistic simulation Online publication date: Sun, 21-Feb-2010
by Stephan Roche, Thierry Poiroux, Gilles Lecarval, Sylvain Barraud, Francois Triozon, Martin Persson, Yann Michel Niquet
International Journal of Nanotechnology (IJNT), Vol. 7, No. 4/5/6/7/8, 2010
Abstract: In this paper, we review and contrast some computational methodologies to investigate charge transport in low dimensional materials and devices. This includes ultra-scaled MOS devices as well as nanowires-based field effects transistors or carbon nanotubes-based emerging devices. After presenting the context of nanodevice simulation, the focus will be made on the limits for ballistic transport in these several types of nanodevices.
Online publication date: Sun, 21-Feb-2010
If you are not a subscriber and you just want to read the full contents of this article, buy online access here.Complimentary Subscribers, Editors or Members of the Editorial Board of the International Journal of Nanotechnology (IJNT):
Login with your Inderscience username and password:
Want to subscribe?
A subscription gives you complete access to all articles in the current issue, as well as to all articles in the previous three years (where applicable). See our Orders page to subscribe.
If you still need assistance, please email email@example.com