A growth model for marketing evolution of multi-generation NAND flash memory
by Su-Yun Chiang, Yiming Li, Hsiao-Cheng Yu
International Journal of Computational Science and Engineering (IJCSE), Vol. 5, No. 1, 2010

Abstract: Marketing growth of information-technology products is continuously sustained by semiconductor non-volatile memories. Flash memory plays a crucial role for mass storage of portable electronic systems. In this work, we study the marketing dynamics of flash memory using a growth model. The model considering non-uniform influence, asymmetric diffusion, and heterogeneity of the population of potential adaptors is solved and optimised numerically. Comparison between simulated and realistic data for NAND flash memory from 128 Mb to 1 Gbit verifies the theoretical findings. The results of this study could be advanced for forecasting new technologies of flash memory.

Online publication date: Fri, 11-Dec-2009

The full text of this article is only available to individual subscribers or to users at subscribing institutions.

Existing subscribers:
Go to Inderscience Online Journals to access the Full Text of this article.

Pay per view:
If you are not a subscriber and you just want to read the full contents of this article, buy online access here.

Complimentary Subscribers, Editors or Members of the Editorial Board of the International Journal of Computational Science and Engineering (IJCSE):
Login with your Inderscience username and password:

    Username:        Password:         

Forgotten your password?

Want to subscribe?
A subscription gives you complete access to all articles in the current issue, as well as to all articles in the previous three years (where applicable). See our Orders page to subscribe.

If you still need assistance, please email subs@inderscience.com