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Structural, optical and field emission properties of ZnO nanowires grown by non-catalytic thermal evaporation process
by Ahmad Umar, S.H. Kim, M. Vaseem, J-H. Kim, Y.B. Hahn
International Journal of Nanomanufacturing (IJNM), Vol. 4, No. 1/2/3/4, 2009
Abstract: Well-crystallised vertically aligned ZnO nanowires have been synthesised on silicon substrate via simple thermal evaporation process without the use of metal catalysis or additives at 750°C by using metallic zinc powder and oxygen gas as source materials for zinc and oxygen, respectively. The X-ray diffraction (XRD) pattern of the grown nanowires reveals that the grown structures are well-crystalline and possessing a wurtzite hexagonal phase. The room-temperature PL spectrum exhibited a sharp and strong UV emission with a broad green emission confirming good optical properties for the as-grown ZnO nanowires. The field emission characterisation exhibited that a turn-on field for the vertically aligned ZnO nanowires was 3.7 V/μm and the emission current density reached to 0.014 mA/cm² at an applied electrical field of ∼5.5 V/μm and shows no saturation. Moreover, the ZnO nanowire based field emission device exhibited a uniform light emission.

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