The full text of this article:

I-V-T studies on GaN/AlN double barrier resonant tunnelling diodes
by Farag S. Al-Hazmi, Rabab Mohammad Farraj, Azhar A. Ansari
International Journal of Nanomanufacturing (IJNM), Vol. 4, No. 1/2/3/4, 2009
Abstract: Double barrier resonant tunnelling diodes are the first practical nanoelectronic devices which are being actively pursued for applications in electronic circuits. Temperature dependent current-voltage behaviour of GaN/AlN double barrier resonant tunnelling diodes has been studied between 77K and 420K. The absence of resonant tunnelling peak(s) in these nanoelectronic devices has been explained on the presence of traps/defects in the quantum well which tend to destroy coherent tunnelling. Thermal activation energy of the traps has been estimated. A model has been proposed which accounts for the observed I-V-T behaviour.

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