The full text of this article:

A novel nanoscale high breakdown voltage lateral bipolar junction transistor on silicon-on-insulator
by Sajad A. Loan, S. Qureshi, S. Sundar Kumar Iyer
International Journal of Nanomanufacturing (IJNM), Vol. 4, No. 1/2/3/4, 2009
Abstract: A novel nanoscale lateral bipolar junction transistor (LBJT) on silicon-on-insulator (SOI) with buried oxide double step (BODS) structure is proposed. Numerical simulations demonstrate that the breakdown voltage of the proposed device is significantly higher than that of the conventional device. An increase of 150% in breakdown voltage has been obtained in the proposed device. The increase in the breakdown voltage is due to the creation of an additional electric field peak in the collector drift region, leading to greater uniformity in the horizontal component of the surface electric field and hence increases in the breakdown voltage.

is only available to individual subscribers or to users at subscribing institutions.

Pay per view: If you are not a Subscriber and you just want to read the full contents of this article, please click here to purchase online access to the full-text of this article. Please allow 3 days + mailing time. Current price for article is Thirty Euros (€30)

Complimentary Subscribers, Editors or Members of the Editorial Board of the International Journal of Nanomanufacturing (IJNM) journal, that have been redirected here, please check if you have a registered username/password subscription with Inderscience. If that is the case, please Login:

If you are not yet a Subscriber to International Journal of Nanomanufacturing (IJNM) journal, you can subscribe by following a few simple and quick steps. A subscription will give you complete access to all articles in the current issue, as well as to all articles in the previous three years, where applicable. Click here to subscribe.

Should you experience further difficulties or have any enquiries, please email subs@inderscience.com