The full text of this article
Nano-silver microcavity enhanced UV GaN light emitter
by N.M. Ahmed, Zaliman Sauli, Uda Hashim, Zul Azhar Zahid Jamal
International Journal of Nanomanufacturing (IJNM), Vol. 4, No. 1/2/3/4, 2009
Abstract: We report results of measurements that help to clarify the role of silver in the reflection of UV emission light from GaN. A GaN as an active layer was sandwiched between two silver metal reflectors. GaN layer on sapphire showed a photoluminescence (PL) peak around 364 nm and its full width half maximum was about 6.7 nm. Two types of microcavity, were fabricated: half-cavity GaN/sapphire/silver and full-cavity silver/GaN/sapphire/silver. Photoluminescence measurements showed a two-fold intensity enhancement in half-cavity back mirror. In the full cavity samples, the amplitude of the photoluminescence is enhanced ten times when we used 50 nm silver as a front mirror. A tremendous more than 16-fold enhancement is obtained when silver mirror of 25 nm was used as a front mirror. The increase in the photoluminescence intensity is explained in terms of competition between increasing absorption in the cavity, silver surface plasmon coupling and increasing optical field-enhancement due to resonator.
is only available to individual subscribers or to users at subscribing institutions.
Go to Inderscience Online Journals to access the Full Text of this article.
Pay per view:
If you are not a subscriber and you just want to read the full contents of this article, buy online access here.
Complimentary Subscribers, Editors or Members of the Editorial Board of the International Journal of Nanomanufacturing (IJNM):
Login with your Inderscience username and password:
Want to subscribe?
A subscription gives you complete access to all articles in the current issue, as well as to all articles in the previous three years (where applicable).
See our Orders page to subscribe.
If you still need assistance, please email email@example.com