A drain-current model for DG PMOSFETs with fabricated 35 nm device comparison Online publication date: Wed, 14-Mar-2007
by Todd G. Mckenzie, Yiming Li
International Journal of Computational Science and Engineering (IJCSE), Vol. 2, No. 3/4, 2006
Abstract: This work presents a continuous, analytic drain-current model for symmetric DG PMOSFETs. The model is derived from the closed form solution of Poisson's equation and current continuity equation without the charge sheet approximation. The model is extended to include the mobility degradation effect. In addition, a fast solver is presented which determines drain current to within a user-defined accuracy. The new model is fit to hardware, and I–V curves comparing the analytic model to experimental data are shown.
Online publication date: Wed, 14-Mar-2007
If you are not a subscriber and you just want to read the full contents of this article, buy online access here.Complimentary Subscribers, Editors or Members of the Editorial Board of the International Journal of Computational Science and Engineering (IJCSE):
Login with your Inderscience username and password:
Want to subscribe?
A subscription gives you complete access to all articles in the current issue, as well as to all articles in the previous three years (where applicable). See our Orders page to subscribe.
If you still need assistance, please email email@example.com