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Vol. 1

International Journal of Materials and Product Technology

2005 Vol. 22 No. 1/2/3

Special Issue on Crystal Growth of Semiconductors from the Liquid Phase

Guest Editor: Professor Sadik Dost

 

Editorial
PagesTitle and authors
2-19Use of an axial magnetic field to suppress convection in the solvent of Ge0.98Si0.02 grown by the travelling solvent method
L. Abidi, M.Z. Saghir, D. Labrie
DOI: 10.1504/IJMPT.2005.005744

20-34A numerical study of the buoyancy convection occurring during the formation of InGaSb solution in a GaSb/InSb/GaSb sandwich system
K. Arafune, N. Murakami, T. Kimura, M. Kumagawa, Y. Hayakawa, T. Ozawa, Y. Okano, S. Dost
DOI: 10.1504/IJMPT.2005.005745

35-49Heating flux effects on floating zone growth under micro-gravity conditions
R. Bennacer, M. El Ganaoui, E. Semma, A. Cheddadi
DOI: 10.1504/IJMPT.2005.005746

50-63Epitaxial lateral overgrowth of semiconductor structures by liquid phase epitaxy
D. Dobosz, Z.R. Zytkiewicz
DOI: 10.1504/IJMPT.2005.005747

64-83Dislocation-free CZ-Si crystal growth without the thin Dash-neck
Xinming Huang, Toshinori Taishi, Keigo Hoshikawa
DOI: 10.1504/IJMPT.2005.005748

84-94Heat and oxygen transfer in silicon melt in an electromagnetic Czochralski system with transverse magnetic fields
Koichi Kakimoto, Takashige Shinozaki, Yoshio Hashimoto
DOI: 10.1504/IJMPT.2005.005749

95-104Improvement of compositional homogeneity in In1-xGaxAs bulk crystals grown by the travelling liquidus-zone method
K. Kinoshita, Y. Ogata, N. Koshikawa, S. Adachi, S. Yoda, M. Iwai, T. Tsuru, Y. Muramatsu
DOI: 10.1504/IJMPT.2005.005750

105-121Homogeneity of Ge1-xSix alloys (x≤0.30) grown by the travelling solvent method
D. Labrie, A.E. George, M. Jamieson, S. Obruchkov, J.P. Healey, B.E. Paton, M.Z. Saghir
DOI: 10.1504/IJMPT.2005.005751

122-134Unsteadiness and control by using thermal boundary modulation in restricted fluid domain of vertical Bridgman apparatus
E. Semma, M. El Ganaoui, V. Timchenko, E. Leonardi
DOI: 10.1504/IJMPT.2005.005760

135-150Three-dimensional modelling of Ge1-xSix by the travelling solvent method in the presence of coriolis and centrifugal forces
T.J. Makriyannis, M.Z. Saghir, D. Labrie
DOI: 10.1504/IJMPT.2005.005761

151-171A three-dimensional numerical study of Marangoni convection in a floating full zone
Hisashi Minakuchi, Yasunori Okano, Sadik Dost
DOI: 10.1504/IJMPT.2005.005762

172-184An experimental study for the role of natural convection in the dissolution of GaSb into InSb melt, and the growth of InxGa1-xSb crystals
N. Murakami, K. Arafune, T. Koyama, Y. Momose, M. Kumagawa, Y. Hayakawa, T. Ozawa, Y. Okano, S. Dost
DOI: 10.1504/IJMPT.2005.005763

185-212Growth of InGaAs and SiGe homogeneous bulk crystals which have complete miscibility in the phase diagrams
Kazuo Nakajima, Yukinaga Azuma, Noritaka Usami, Gen Sazaki, Toru Ujihara, Kozo Fujiwara, Toetsu Shishido, Yoshito Nishijima, Toshihiro Kusunoki
DOI: 10.1504/IJMPT.2005.005764

213-225On some basic considerations of solid/liquid transition models under a microgravity environment
R. Prud'homme, M. El Ganaoui
DOI: 10.1504/IJMPT.2005.005765

226-261Growth of AlN, GaN and InN from the solution
S. Krukowski, I. Grzegory, M. Bockowski, B. Lucznik, T. Suski, G. Nowak, J. Borysiuk, M. Wroblewski, M. Leszczynski, P. Perlin, S. Porowski, J.L. Weyher
DOI: 10.1504/IJMPT.2005.005766