Article: Growth of Hg1-xCdxTe nanostructures by molecular beam epitaxy with ellipsometric control Journal: International Journal of Nanotechnology (IJNT) 2006 Vol.3 No.1 pp.120 - 130 Abstract: We demonstrate the growth of potential barriers, wells and periodic nanostructures on the basis of Hg1-xCdxTe by molecular beam epitaxy. In situ single wavelength ellipsometry is used for control of thickness and variation of Hg1-xCdxTe composition. The behavior of ellipsometric parameters measured during the growth of potential barriers, wells and periodic structures are in good agreement with the numerical calculated of variation of ellipsometric parameters ψ and Δ. The thickness and composition of Hg1-xCdxTe nanolayers were determined from comparison of experimental and calculated ψ and Δ. The accuracy of nanolayer thickness determination reaches the value of 0.1 nm and composition ±0.002 mole fraction. Inderscience Publishers - linking academia, business and industry through research

Title: Growth of Hg_1-xCd_xTe nanostructures by molecular beam epitaxy with ellipsometric control

Authors: N.N. Mikhailov, R.N. Smirnov, S.A. Dvoretsky, Yu.G. Sidorov, V.A. Shvets, E.V. Spesivtsev, S.V. Rykhlitski

Addresses: Institute of Semiconductor Physics, Siberian Division of Russian Academy of Sciences, Lavrent'ev Av., 13, Novosibirsk 630090, Russia. ' Institute of Semiconductor Physics, Siberian Division of Russian Academy of Sciences, Lavrent'ev Av., 13, Novosibirsk 630090, Russia. ' Institute of Semiconductor Physics, Siberian Division of Russian Academy of Sciences, Lavrent'ev Av., 13, Novosibirsk 630090, Russia. ' Institute of Semiconductor Physics, Siberian Division of Russian Academy of Sciences, Lavrent'ev Av., 13, Novosibirsk 630090, Russia. ' Institute of Semiconductor Physics, Siberian Division of Russian Academy of Sciences, Lavrent'ev Av., 13, Novosibirsk 630090, Russia. ' Institute of Semiconductor Physics, Siberian Division of Russian Academy of Sciences, Lavrent'ev Av., 13, Novosibirsk 630090, Russia. ' Institute of Semiconductor Physics, Siberian Division of Russian Academy of Sciences, Lavrent'ev Av., 13, Novosibirsk 630090, Russia

Abstract: We demonstrate the growth of potential barriers, wells and periodic nanostructures on the basis of Hg_1-xCd_xTe by molecular beam epitaxy. In situ single wavelength ellipsometry is used for control of thickness and variation of Hg_1-xCd_xTe composition. The behavior of ellipsometric parameters measured during the growth of potential barriers, wells and periodic structures are in good agreement with the numerical calculated of variation of ellipsometric parameters ψ and Δ. The thickness and composition of Hg_1-xCd_xTe nanolayers were determined from comparison of experimental and calculated ψ and Δ. The accuracy of nanolayer thickness determination reaches the value of 0.1 nm and composition ±0.002 mole fraction.

Keywords: Hg_1-xCd_xTe nanostructures; molecular beam epitaxy; barriers; wells; periodic structures; ellipsometric parameters; nanotechnology; thickness control; variation control; nanolayers; infrared detectors; semiconductors.

DOI: 10.1504/IJNT.2006.008725

International Journal of Nanotechnology, 2006 Vol.3 No.1, pp.120 - 130

Published online: 18 Jan 2006 *

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Title: Growth of Hg1-xCdxTe nanostructures by molecular beam epitaxy with ellipsometric control

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Title: Growth of Hg_1-xCd_xTe nanostructures by molecular beam epitaxy with ellipsometric control