Title: Formation of photoluminescent properties inherent to silicon quantum dots

Authors: E.B. Kaganovich, S.V. Svechnikov, E.G. Manoilov, I.M. Kizyаk

Addresses: V. Lashkaryov Institute of Semiconductor Physics, NAS of Ukraine, 41 Prospekt Nauky, Kyiv 03028, Ukraine. ' V. Lashkaryov Institute of Semiconductor Physics, NAS of Ukraine, 41 Prospekt Nauky, Kyiv 03028, Ukraine. ' V. Lashkaryov Institute of Semiconductor Physics, NAS of Ukraine, 41 Prospekt Nauky, Kyiv 03028, Ukraine. ' V. Lashkaryov Institute of Semiconductor Physics, NAS of Ukraine, 41 Prospekt Nauky, Kyiv 03028, Ukraine

Abstract: The analysis of original works devoted to preparation and investigation of nanocrystalline silicon (nc-Si) films containing Si quantum dots (QDs) that exhibit photoluminescence (PL) within the range 1.4 – 3.2 eV at room temperature is presented. Thin films were prepared by pulse laser deposition (PLD). Offered by authors doping these nc-Si films with gold in the growing process provided passivation of Si dangling bonds (DB) and some increase in the forbidden gap width of a barrier layer. Demonstrated are possibilities to explain and control stationary and kinetic characteristics of visible PL in the framework of the quantum-dimensional model as well as radiative exciton annihilation with taking into account Si nanocrystals (NCs) size distribution pronounced in PL features.

Keywords: photoluminescence; silicon quantum dots; low-dimensional structures; pulsed laser ablation; metal doping; defects; local electron states; nanotechnology; nanocrystalline silicon films.

DOI: 10.1504/IJNT.2006.008724

International Journal of Nanotechnology, 2006 Vol.3 No.1, pp.106 - 119

Published online: 18 Jan 2006 *

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