Title: Evaluation of ultra-thin structures composed of graphene and high-k dielectrics for resistive switching memory applications

Authors: Qian Wu; Sergi Claramunt; Marc Porti; Montserrat Nafría; Xavier Aymerich

Addresses: Electronic Engineering Department, Universitat Autonoma de Barcelona, Edifici Q, Campus-UAB, Cerdanyola del Vallès 08193, Spain ' Electronic Engineering Department, Universitat Autonoma de Barcelona, Edifici Q, Campus-UAB, Cerdanyola del Vallès 08193, Spain ' Electronic Engineering Department, Universitat Autonoma de Barcelona, Edifici Q, Campus-UAB, Cerdanyola del Vallès 08193, Spain ' Electronic Engineering Department, Universitat Autonoma de Barcelona, Edifici Q, Campus-UAB, Cerdanyola del Vallès 08193, Spain ' Electronic Engineering Department, Universitat Autonoma de Barcelona, Edifici Q, Campus-UAB, Cerdanyola del Vallès 08193, Spain

Abstract: In this work, metal-insulator-semiconductor (MIS) structures with graphene as interfacial layer between the HfO₂ dielectric and the top electrode are evaluated as resistive random access memory (RRAM) devices. The graphene acts as a barrier between the metal electrode and the HfO₂ layer, hindering the diffusion of O atoms and protecting the structure from a destructive microstructural damage. The results show that when graphene is present, resistive switching (RS) can be measured probably owing to the controlled diffusion of the metal atoms from the electrode. We show also that the quality of graphene layer plays an important role on the behaviour of the described structures.

Keywords: resistive RAM; random access memory; RRAM; graphene; high-k dielectrics; ultra-thin structures; resistive switching memory; metal-insulator-semiconductor; MIS structures; HfO2; hafnium oxide; nanotechnology.

DOI: 10.1504/IJNT.2016.079666

International Journal of Nanotechnology, 2016 Vol.13 No.8/9, pp.634 - 641

Published online: 07 Oct 2016 *

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