Title: High-quality single-crystal diamond-graphite-diamond membranes and devices

Authors: V.P. Popov; A.K. Gutakovskii; V.A. Antonov; S.N. Podlesnyi; I.N. Kupriyanov; Yu.N. Palyanov; S.V. Rubanov

Addresses: Rzhanov Institute of Semiconductor Physics, SB RAS, Russia; Tomsk State University, Russia ' Rzhanov Institute of Semiconductor Physics, SB RAS, Russia; Novosibirsk State University, Russia ' Rzhanov Institute of Semiconductor Physics, SB RAS, Russia ' Rzhanov Institute of Semiconductor Physics, SB RAS, Russia ' Sobolev Institute of Geology and Mineralogy SB RAS, Russia; Novosibirsk State University, Russia ' Sobolev Institute of Geology and Mineralogy SB RAS, Russia; Novosibirsk State University, Russia ' Bio21 Institute, University of Melbourne, Australia

Abstract: Implantation of hydrogen ions into synthetic single-crystal diamonds followed by subsequent high-temperature annealing and anodic etching of implanted crystals was used to obtain structurally perfect 30-nm thick diamond membranes with optically active NV⁻ centres (area up to several tens mm²) appropriate for use in integral magnetometers and quantum-informatics optoelectronic circuits.

Keywords: graphite; ion implantation; hydrogen ions; high pressure annealing; high temperature annealing; anodic etching; single-crystal diamonds; diamond-graphite-diamond layers; diamond-graphite-diamond membranes; diamond membranes; integral magnetometers; quantum informatics; optoelectronic circuits; nanotechnology.

DOI: 10.1504/IJNT.2015.067208

International Journal of Nanotechnology, 2015 Vol.12 No.3/4, pp.226 - 237

Published online: 31 Jan 2015 *

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