Article: "Electrical behaviour and analytical modelling of I-V and C-V characteristics of Schottky barrier diode based on nitrided InP(100)" Journal: Int. J. of Materials Engineering Innovation, 2014 Vol.5 No.4 pp.294 - 306 Abstract: In this paper, electrical characterisation and analytical modelling of current-voltage (I-V) and capacitance-voltage (C-V) for Hg/InN/n-InP Schottky structures are investigated. We have studied electrically thin InN films realised by the nitridation of InP(100) substrates using a glow discharge source (GDS) in ultra high vacuum. So, we have calculated, using I-V and C-V measurements, the ideality factor n, the saturation current Is, the barrier height φbn, the series resistance Rs, the doping concentration Nd and the diffusion voltage Vd. We have also established analytical calculation programmes of I-V and C-V curves in order to show the effect of the interface layer InN and series resistance Rs on the calculated parameters. - Inderscience Publishers - linking academia, business and industry through research

Int. J. of Materials Engineering Innovation » 2014 Vol.5, No.4

Title: Electrical behaviour and analytical modelling of I-V and C-V characteristics of Schottky barrier diode based on nitrided InP(100)

Authors: Kheira Ameur; Halima Mazari; Zineb Benamara; Nadia Benseddik; Reski Khelifi; Mohammed Mostefaoui; Nawal Benyahya; Bernard Gruzza

Addresses:
Applied Micro Electronic Laboratory, University Djillali Liabes of Sidi Bel Abbes, 22000 Sidi Bel Abbes, Algeria
Applied Micro Electronic Laboratory, University Djillali Liabes of Sidi Bel Abbes, 22000 Sidi Bel Abbes, Algeria
Applied Micro Electronic Laboratory, University Djillali Liabes of Sidi Bel Abbes, 22000 Sidi Bel Abbes, Algeria
Applied Micro Electronic Laboratory, University Djillali Liabes of Sidi Bel Abbes, 22000 Sidi Bel Abbes, Algeria
Applied Micro Electronic Laboratory, University Djillali Liabes of Sidi Bel Abbes, 22000 Sidi Bel Abbes, Algeria
Applied Micro Electronic Laboratory, University Djillali Liabes of Sidi Bel Abbes, 22000 Sidi Bel Abbes, Algeria
Applied Micro Electronic Laboratory, University Djillali Liabes of Sidi Bel Abbes, 22000 Sidi Bel Abbes, Algeria
Laboratory of Material Sciences for Electronic and Automatic, University of Blaise Pascal, Les Cézeaux, Clermont II, France

Abstract: In this paper, electrical characterisation and analytical modelling of current-voltage (I-V) and capacitance-voltage (C-V) for Hg/InN/n-InP Schottky structures are investigated. We have studied electrically thin InN films realised by the nitridation of InP(100) substrates using a glow discharge source (GDS) in ultra high vacuum. So, we have calculated, using I-V and C-V measurements, the ideality factor n, the saturation current I_s, the barrier height φ_bn, the series resistance R_s, the doping concentration N_d and the diffusion voltage V_d. We have also established analytical calculation programmes of I-V and C-V curves in order to show the effect of the interface layer InN and series resistance R_s on the calculated parameters.

Keywords: InN; InP(100); electrical measurements; analytical modelling; Schottky barrier diodes; nitridation; semiconductors; nitrides; indium nitride; indium phosphide; ideality factor; saturation current; barrier height; series resistance; doping concentration; diffusion voltage; interface layer.

DOI: 10.1504/IJMATEI.2014.066853

Int. J. of Materials Engineering Innovation, 2014 Vol.5, No.4, pp.294 - 306

Available online: 11 Jan 2015