Article: "Electrical characterisation of Schottky diodes based on SiC with different contact surfaces" Journal: Int. J. of Materials Engineering Innovation, 2014 Vol.5 No.4 pp.285 - 293 Abstract: We present in this article current-voltage I(V) and capacitance-voltage C(V) characteristics of Schottky diodes based on SiC. These diodes have different surfaces of Schottky contact. The effect of the surface on the behaviour of the diode is studied. Different current transport mechanisms are revealed from measurements. In addition to thermionic current, other currents are added like the recombination current, tunnelling current and leakage current. Different parameters are extracted from I(V) and C(V) characteristics, such as ideality factor, barrier height, series resistance, doping and the density of interface states. - Inderscience Publishers - linking academia, business and industry through research

Int. J. of Materials Engineering Innovation » 2014 Vol.5, No.4

Title: Electrical characterisation of Schottky diodes based on SiC with different contact surfaces

Authors: Nadia Benseddik; Halima Mazari; Mohammed Mostefaoui; Kheira Ameur; Zineb Benamara; Reski Khelifi; Nawal Benyahya; Jean-Marie Bluet

Addresses:
Laboratoire de Microélectronique Appliquée, Université Djillali Liabès de Sidi Bel Abbés, 22000 Sidi Bel Abbés, Algeria
Laboratoire de Microélectronique Appliquée, Université Djillali Liabès de Sidi Bel Abbés, 22000 Sidi Bel Abbés, Algeria
Laboratoire de Microélectronique Appliquée, Université Djillali Liabès de Sidi Bel Abbés, 22000 Sidi Bel Abbés, Algeria
Laboratoire de Microélectronique Appliquée, Université Djillali Liabès de Sidi Bel Abbés, 22000 Sidi Bel Abbés, Algeria
Laboratoire de Microélectronique Appliquée, Université Djillali Liabès de Sidi Bel Abbés, 22000 Sidi Bel Abbés, Algeria
Laboratoire de Microélectronique Appliquée, Université Djillali Liabès de Sidi Bel Abbés, 22000 Sidi Bel Abbés, Algeria
Laboratoire de Microélectronique Appliquée, Université Djillali Liabès de Sidi Bel Abbés, 22000 Sidi Bel Abbés, Algeria
Institut des Nanotechnologies de Lyon INL, Site INSA Bâtiment Blaise Pascal 7 avenue, Jean Capelle 69621 Villeurbanne Cedex, France

Abstract: We present in this article current-voltage I(V) and capacitance-voltage C(V) characteristics of Schottky diodes based on SiC. These diodes have different surfaces of Schottky contact. The effect of the surface on the behaviour of the diode is studied. Different current transport mechanisms are revealed from measurements. In addition to thermionic current, other currents are added like the recombination current, tunnelling current and leakage current. Different parameters are extracted from I(V) and C(V) characteristics, such as ideality factor, barrier height, series resistance, doping and the density of interface states.

Keywords: SiC; silicon carbide; electrical measurement; Schottky diodes; contact surfaces; thermionic current; recombination current; tunnelling current; leakage current; ideality factor; barrier height; series resistance; doping; interface states.

DOI: 10.1504/IJMATEI.2014.066852

Int. J. of Materials Engineering Innovation, 2014 Vol.5, No.4, pp.285 - 293

Available online: 11 Jan 2015