Title: Fabrication of finlike thin-film transistors by solution-processed zinc oxide and nanoimprint lithography

Authors: H.J.H. Chen; S.T. Liu; S.Z. Chen

Addresses: Department of Electrical Engineering, National Chi Nan University, Puli Nanotu, Taiwan ' Department of Electrical Engineering, National Chi Nan University, Puli Nanotu, Taiwan ' CNMM, National Tsing Hua University, Hsinchu, Taiwan

Abstract: This study addresses on the characteristics of transparent thin-film transistors, TTFTs, with finlike channels fabricated by the solution-processed ZnO and UV nanoimprint lithography. The proposed TTFTs exhibited better output drain current, ON/OFF current ratio, sub-threshold swing and field-effect mobility than that with the single channel one. The device performances with respect to line width/space (l/s) ratio of finlike channels were also studied. With this approach, the low cost and high performance TTFTs can be fabricated for future flat-panel display applications.

Keywords: zinc oxide; ZnO; transparent transistors; thin film transistors; solution process; transistor fabrication; finlike transistors; nanoimprint lithography; output drain current; ON/OFF current ratio; sub-threshold swing; field-effect mobility; finlike channels; flat panel displays.

DOI: 10.1504/IJNT.2015.066193

International Journal of Nanotechnology, 2015 Vol.12 No.1/2, pp.46 - 58

Published online: 04 Dec 2014 *

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