Title: The IGZO fully transparent oxide thin film transistor on glass substrate

Authors: Cheng-I Lin; Yean-Kuen Fang; Wei-Chao Chang

Addresses: VLSI Technology Laboratory, Institute of Microelectronics, Department of Electrical Engineering, National Cheng Kung University, Tainan 701, Taiwan ' VLSI Technology Laboratory, Institute of Microelectronics, Department of Electrical Engineering, National Cheng Kung University, Tainan 701, Taiwan ' VLSI Technology Laboratory, Institute of Microelectronics, Department of Electrical Engineering, National Cheng Kung University, Tainan 701, Taiwan

Abstract: The IGZO enhancement mode bottom gate fully transparent thin film transistors prepared on glass substrate were studied. With a-IGZO and GZO, respectively, as active layer, source/drain and gate electrode, we achieved a very high and uniform transparence of 84% in visible range (550-880 nm). Besides, all of the layers can be prepared by RF magnetron sputtering at room temperature.

Keywords: amorphous ZnO; a-IGZO; HfO2; GZO; TFT;; transparence; magnetron sputtering; oxygen vacancies; flat panel displays; thin film transistors; glass substrate; transparent transistors; indium gallium zinc oxide; hafnium oxide; hafnia.

DOI: 10.1504/IJNT.2015.066189

International Journal of Nanotechnology, 2015 Vol.12 No.1/2, pp.3 - 10

Published online: 04 Dec 2014 *

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