Title: Device analysis and computer modelling of a-Si:H solar cell

Authors: P. Dinesh Kumar; C. Evangeline; R. Praiseline Jasmi

Addresses: Electronics and Communication Engineering Department, Karunya University, Coimbatore, 641 114, India ' Electronics and Communication Department, Karunya University, Coimabtore, 641 114, India ' Electronics and Communication Department, Karunya University, Coimabtore, 641 114, India

Abstract: A computer simulation of a-Si:H solar cell is presented in the analysis of its optical and electrical properties. The p-i-n single junction a-SiC:H/a-Si:H/a-Si:H solar cell, is investigated by applying to the simulator program. The relation between the photon energy with the optical parameters is included; thickness of P layer and its impact on solar cell efficiency is manipulated using PC1D. Illuminated I-V or EQE curves of the cell are calculated using the spectral generation profile in TCAD sentaurus. Such a study leads to the identification of optimum process conditions for the preparation of thin film.

Keywords: computer simulation; amorphous silicon solar cells; TCAD; PC1D; computational vision; optical parameters; doping concentration; recombination rate; I-V characteristics; spectral response; thin films; photovoltaics; photon energy; modelling.

DOI: 10.1504/IJCVR.2013.059099

International Journal of Computational Vision and Robotics, 2013 Vol.3 No.4, pp.251 - 260

Received: 16 May 2013
Accepted: 21 Jul 2013

Published online: 18 Jul 2014 *

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