Article: Improvement of compositional homogeneity in In1-xGaxAs bulk crystals grown by the travelling liquidus-zone method Journal: International Journal of Materials and Product Technology (IJMPT) 2005 Vol.22 No.1/2/3 pp.95 - 104 Abstract: Homogeneity of In1-xGaxAs bulk crystals grown by the Travelling Liquidus-Zone (TLZ) method was improved by controlling the position of the freezing interface. This was achieved by matching precisely the rate of sample translation with the freezing rate that was calculated as a function of temperature gradient in the liquidus-zone through our one-dimensional TLZ growth model. Furthermore, results show that the sample translation at a constant rate from the beginning to the end of the crystal growth process is sufficient for the growth of homogeneous crystals, and no complicated procedures such as feedback of the interface temperature, and/or supply of the solute during crystal growth are required. This is an important feature (advantage) of the TLZ method over other growth techniques used to grow homogeneous alloy crystals. Inderscience Publishers - linking academia, business and industry through research

Title: Improvement of compositional homogeneity in In_1-xGa_xAs bulk crystals grown by the travelling liquidus-zone method

Authors: K. Kinoshita, Y. Ogata, N. Koshikawa, S. Adachi, S. Yoda, M. Iwai, T. Tsuru, Y. Muramatsu

Addresses: Japan Aerospace Exploration Agency, 2-1-1 Sengen, Tsukuba, 305-8505, Japan. ' Japan Aerospace Exploration Agency, 2-1-1 Sengen, Tsukuba, 305-8505, Japan. ' Japan Aerospace Exploration Agency, 2-1-1 Sengen, Tsukuba, 305-8505, Japan. ' Japan Aerospace Exploration Agency, 2-1-1 Sengen, Tsukuba, 305-8505, Japan. ' Japan Aerospace Exploration Agency, 2-1-1 Sengen, Tsukuba, 305-8505, Japan. ' Advanced Engineering Services Co. Ltd, 1-6-1 Takezono, Tsukuba, 305-0032, Japan. ' Advanced Engineering Services Co. Ltd, 1-6-1 Takezono, Tsukuba, 305-0032, Japan. ' Advanced Engineering Services Co. Ltd, 1-6-1 Takezono, Tsukuba, 305-0032, Japan

Abstract: Homogeneity of In_1-xGa_xAs bulk crystals grown by the Travelling Liquidus-Zone (TLZ) method was improved by controlling the position of the freezing interface. This was achieved by matching precisely the rate of sample translation with the freezing rate that was calculated as a function of temperature gradient in the liquidus-zone through our one-dimensional TLZ growth model. Furthermore, results show that the sample translation at a constant rate from the beginning to the end of the crystal growth process is sufficient for the growth of homogeneous crystals, and no complicated procedures such as feedback of the interface temperature, and/or supply of the solute during crystal growth are required. This is an important feature (advantage) of the TLZ method over other growth techniques used to grow homogeneous alloy crystals.

Keywords: III-V compound; diffusion limited growth; homogeneity; travelling liquidus-zone method; bulk crystals; freezing interface; crystal growth; homogeneous alloy crystals.

DOI: 10.1504/IJMPT.2005.005750

International Journal of Materials and Product Technology, 2005 Vol.22 No.1/2/3, pp.95 - 104

Published online: 30 Nov 2004 *

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Title: Improvement of compositional homogeneity in In1-xGaxAs bulk crystals grown by the travelling liquidus-zone method

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Title: Improvement of compositional homogeneity in In_1-xGa_xAs bulk crystals grown by the travelling liquidus-zone method