Title: Heat and oxygen transfer in silicon melt in an electromagnetic Czochralski system with transverse magnetic fields

Authors: Koichi Kakimoto, Takashige Shinozaki, Yoshio Hashimoto

Addresses: Research Institute for Applied Mechanics, Kyushu University, 6-1, Kasuga-Koen, Kasuga 816-8580, Japan. ' Research Institute for Applied Mechanics, Kyushu University, 6-1, Kasuga-Koen, Kasuga 816-8580, Japan. ' Research Institute for Applied Mechanics, Kyushu University, 6-1, Kasuga-Koen, Kasuga 816-8580, Japan

Abstract: Flow with three-dimensional phenomena of silicon melt in an electromagnetic Czochralski (EMCZ) system with transverse magnetic fields was numerically investigated. This paper focused on the effect of electrode positions and direction of electric current on heat and oxygen transfer in the melt. The results showed that the case with current flow perpendicular to the magnetic fields can modify heat and oxygen transfer in the melt. The results also showed that electric current flow perpendicular to the applied transverse magnetic fields enhanced heat and oxygen transfer from crucible to a crystal in the melt.

Keywords: computer simulation; Czochralski method; semiconductor silicon; heat transfer; oxygen transfer; silicon melt; transverse magnetic fields; electromagnetic Czochralski system.

DOI: 10.1504/IJMPT.2005.005749

International Journal of Materials and Product Technology, 2005 Vol.22 No.1/2/3, pp.84 - 94

Published online: 30 Nov 2004 *

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