Title: Dislocation-free CZ-Si crystal growth without the thin Dash-neck

Authors: Xinming Huang, Toshinori Taishi, Keigo Hoshikawa

Addresses: Institute for Materials Research, Tohoku University, Sendai 980-8577, Japan. ' Faculty of Education, Shinshu University, Nishinagano, Nagano 380-8544, Japan. ' Faculty of Education, Shinshu University, Nishinagano, Nagano 380-8544, Japan

Abstract: It is found that dislocation-free Si crystal growth is possible without a thin neck. Dislocation behaviour in a heavily B-doped CZ-Si crystal has been analysed, and it is found that three kinds of dislocations generated due to thermal shock, lattice misfit and incomplete seeding must be suppressed to grow dislocation-free crystal without the thin Dash-neck. Heavily B-doped or Ge-doped Si seeds are useful in suppressing dislocation generation due to thermal shock, and heavily B- and Ge-codoped Si seeds not only suppress dislocation generation due to thermal shock most effectively but can also suppress that due to lattice misfit. A relative higher melt temperature at the start of pulling is suggested for suppressing the dislocation generation due to incomplete seeding. Dislocations were observed in crystals grown from an annealed heavily B-doped Si seed, and they were probably induced by the dislocation loops in the annealed seed.

Keywords: Czochralski growth; dislocation-free; heavy B and Ge codoping; heavy B doping; Si crystal; crystal growth; dislocation behaviour; thermal shock; lattice misfit; incomplete seeding; melt temperature; thin neck; necking process; silicon crystal.

DOI: 10.1504/IJMPT.2005.005748

International Journal of Materials and Product Technology, 2005 Vol.22 No.1/2/3, pp.64 - 83

Published online: 30 Nov 2004 *

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