Title: High power laser diode with non-absorbing windows fabricated by quantum well intermixing

Authors: T. Lin; H.Q. Zhang; C. Li; X.J. Ma; N. Lin; K. Zheng; X.Y. Ma

Addresses: School of Automation and Information Engineering, Xi'an University of Technology, P.O. Box 710048, Xi'an, China ' School of Automation and Information Engineering, Xi'an University of Technology, P.O. Box 710048, Xi'an, China ' School of Automation and Information Engineering, Xi'an University of Technology, P.O. Box 710048, Xi'an, China ' School of Automation and Information Engineering, Xi'an University of Technology, P.O. Box 710048, Xi'an, China ' Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 100083, Beijing, China ' Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 100083, Beijing, China ' Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 100083, Beijing, China

Abstract: Characterisation techniques based on quantum well intermixing have recently emerged as novel and exploratory methods for developing high power laser diodes. In this paper, we demonstrate the application of Zn impurities induced quantum well intermixing techniques to the non-absorbing windows fabrication for the AlGaInP/GaInP active region red-light laser diodes. The experimental results demonstrate that the photoluminescence characterisation had a blue shift of 23 nm for the diffusion parameters of 540°C and 20 minutes, and the maximum output power from the light-current tests of the thereafter fabricated non-absorbing windows laser diodes were improved by 47% than the conventional LDs.

Keywords: laser diodes; quantum well intermixing; QWI; metal-organic CVD; chemical vapour deposition; MOCVD; semiconducting materials; non-absorbing windows; zinc impurities; photoluminescence.

DOI: 10.1504/IJNM.2013.056063

International Journal of Nanomanufacturing, 2013 Vol.9 No.3/4, pp.368 - 374

Received: 27 Nov 2012
Accepted: 22 Feb 2013
Published online: 31 Mar 2014 *

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