Article: Growth of (002)-oriented ZnO thin films on largely lattice-mismatched substrates using atomic layer deposition Journal: International Journal of Nanotechnology (IJNT) 2013 Vol.10 No.3/4 pp.247 - 259 Abstract: ZnO thin films have been successfully deposited by Atomic Layer Deposition (ALD) using Diethylzinc (DEZn) and water (H<SUB align="right"><SMALL>2</SMALL></SUB>O) as precursors. The preferred orientations of the thin films were found to be strongly dependent on the deposition temperature. (100)-oriented ZnO thin films were grown in the temperature range of 155 to 220°C, whereas (002)-oriented ZnO thin films were formed between 220 to 300°C. It is worth mentioning that ALD technique allowed ZnO thin films with preferred orientation, i.e. (002), to be deposited on both Si and glass substrates which have a large lattice mismatch to ZnO. This process capability could be attributed to the unique characteristics of a slow growth rate due to the self-limiting growth and a relatively high deposition temperature (220-300°C) which provided sufficient energy for Zn and O atoms to migrate towards <0001> in the ALD process. Besides, the (002)-oriented ZnO thin films have the best crystal quality and lowest resistivity. The thickness of as-deposited films could be controlled at nanoscale as the growth rate was proportional to the ALD process cycles. Inderscience Publishers - linking academia, business and industry through research

Title: Growth of (002)-oriented ZnO thin films on largely lattice-mismatched substrates using atomic layer deposition

Authors: Swee-Yong Pung; Kwang-Leong Choy; Xianghui Hou

Addresses: School of Materials and Mineral Resources Engineering, Universiti Sains Malaysia, Seri Ampangan, 14300 Nibong Tebal, Pulau Pinang, Malaysia ' Faculty of Engineering, Energy and Sustainability Research Division, Department of Mechanical, Materials, and Manufacturing Engineering, University Park, University of Nottingham, Nottingham NG7 2RD, UK ' Faculty of Engineering, Energy and Sustainability Research Division, Department of Mechanical, Materials, and Manufacturing Engineering, University Park, University of Nottingham, Nottingham NG7 2RD, UK

Abstract: ZnO thin films have been successfully deposited by Atomic Layer Deposition (ALD) using Diethylzinc (DEZn) and water (H₂O) as precursors. The preferred orientations of the thin films were found to be strongly dependent on the deposition temperature. (100)-oriented ZnO thin films were grown in the temperature range of 155 to 220°C, whereas (002)-oriented ZnO thin films were formed between 220 to 300°C. It is worth mentioning that ALD technique allowed ZnO thin films with preferred orientation, i.e. (002), to be deposited on both Si and glass substrates which have a large lattice mismatch to ZnO. This process capability could be attributed to the unique characteristics of a slow growth rate due to the self-limiting growth and a relatively high deposition temperature (220-300°C) which provided sufficient energy for Zn and O atoms to migrate towards <0001> in the ALD process. Besides, the (002)-oriented ZnO thin films have the best crystal quality and lowest resistivity. The thickness of as-deposited films could be controlled at nanoscale as the growth rate was proportional to the ALD process cycles.

Keywords: atomic layer deposition; photoluminescence; zinc oxide; c-oriented; X-ray diffraction; ZnO thin films; lattice-mismatched substrates; nanotechnology.

DOI: 10.1504/IJNT.2013.053138

International Journal of Nanotechnology, 2013 Vol.10 No.3/4, pp.247 - 259

Published online: 05 Apr 2013 *

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Title: Growth of (002)-oriented ZnO thin films on largely lattice-mismatched substrates using atomic layer deposition

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